
Si3216
16 Rev. 1.0
Not Recommended
f
o
r N
e
w
D
e
si
g
n
s
Table 6. Monitor ADC Characteristics
(V
DDA
, V
DDD
= 3.13 to 5.25 V, T
A
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter Symbol Test Condition Min Typ Max Unit
Differential Nonlinearity
(6-bit resolution)
DNLE –1/2 — 1/2 LSB
Integral Nonlinearity
(6-bit resolution)
INLE –1 — 1 LSB
Gain Error (voltage) — — 10 %
Gain Error (current) — — 20 %
Table 7. Si321x DC Characteristics, V
DDA
=V
DDD
=5.0V
(V
DDA
, V
DDD
= 4.75 to 5.25 V, T
A
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter Symbol Test Condition Min Typ Max Unit
High Level Input Voltage V
IH
0.7 x V
DDD
——V
Low Level Input Voltage V
IL
——0.3xV
DDD
V
High Level Output Voltage V
OH
DIO1,DIO2,SDITHRU:I
O
=–4mA
SDO, DTX:I
O
=–8mA
V
DDD
– 0.6 — — V
DOUT: I
O
= –40 mA
V
DDD
– 0.8 — — V
Low Level Output Voltage V
OL
DIO1,DIO2,DOUT,SDITHRU:
I
O
=4mA
SDO,INT
,DTX:I
O
=8mA
——0.4V
Input Leakage Current I
L
–10 — 10 µA
Table 8. Si321x DC Characteristics, V
DDA
=V
DDD
=3.3V
(V
DDA
, V
DDD
= 3.13 to 3.47 V, T
A
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter Symbol Test Condition Min Typ Max Unit
High Level Input Voltage V
IH
0.7 x V
DDD
——V
Low Level Input Voltage V
IL
——0.3xV
DDD
V
High Level Output Voltage V
OH
DIO1,DIO2,SDITHRU:I
O
=–2mA
SDO, DTX:I
O
=–4mA
V
DDD
– 0.6 — — V
DOUT: I
O
=–40mA
V
DDD
– 0.8 — — V
Low Level Output Voltage V
OL
DIO1,DIO2,DOUT,SDITHRU:
I
O
=2mA
SDO,INT
,DTX:I
O
=4mA
——0.4V
Input Leakage Current I
L
–10 — 10 A
Komentáře k této Příručce